Temperature-dependent photoluminescence and electron field emission properties of AlN nanotip arrays
نویسندگان
چکیده
منابع مشابه
Temperature-Dependent Photoluminescence Emission from Unstrained and Strained GaSe Nanosheets
Two-dimensional AIIIBVI layered semiconductors have recently attracted great attention due to their potential applications in piezo-phototronics and optoelectronics. Here, we report the temperature-dependent photoluminescence (PL) of strained and unstrained GaSe flakes. It is found that, as the temperature increases, the PL from both the strained (wrinkled) and unstrained (flat) positions show ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2009
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3126055